MSB120N08G Datasheet - Maple Semiconductor

MSB120N08G 80V N-Channel MOSFET

This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications. LEAD FREE Pb RoHS Feat.

MSB120N08G Features

* - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TST

MSB120N08G-MapleSemiconductor.pdf