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MSB120N08G 80V N-Channel MOSFET

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Description

MSB120N08G / MSI120N08G MSB120N08G/MSI120N08G 80V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced technology.

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Datasheet Specifications

Part number
MSB120N08G
Manufacturer
Maple Semiconductor
File Size
758.38 KB
Datasheet
MSB120N08G-MapleSemiconductor.pdf
Description
80V N-Channel MOSFET

Features

* - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TST

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