MSB120N08G Datasheet, Mosfet, Maple Semiconductor

MSB120N08G Features

  • Mosfet - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS

PDF File Details

Part number:

MSB120N08G

Manufacturer:

Maple Semiconductor

File Size:

758.38kb

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📄 Datasheet

Description:

80v n-channel mosfet. This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast sw

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MSB120N08G Application

  • Applications LEAD FREE Pb RoHS Features - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switc

TAGS

MSB120N08G
80V
N-Channel
MOSFET
Maple Semiconductor

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