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MSH20120V1 Silicon Carbide Diode

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Description

MSH20120V1 MSH20120V1 1200V Silicon Carbide Diode .

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Datasheet Specifications

Part number
MSH20120V1
Manufacturer
Maple Semiconductor
File Size
210.08 KB
Datasheet
MSH20120V1-MapleSemiconductor.pdf
Description
Silicon Carbide Diode

Features

* -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all loa

Applications

* -Switch Mode Power Supplies -Power Factor Correction -Motor Drives -HID Lighting Package Type : TO-247-2Lead PIN 1 AC PIN 2 Absolute Maximum Ratings TC = 25 ℃ unless otherwise noted Symbol Parameter MSH20120V1 VRRM VRSM VDC IF IFRM Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage

MSH20120V1 Distributors

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