MSH20120V1 - Silicon Carbide Diode

Maple Semiconductor

Datasheet Details

Part number	MSH20120V1
Manufacturer	Maple Semiconductor
File Size	210.08 KB
Description	Silicon Carbide Diode
Datasheet	MSH20120V1-MapleSemiconductor.pdf

-1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Frequency Operation -Temperature-Independent Switching Behavior -Extremely Fast Switching -Positive Temperature Coefficient on VF Benefits -Higher safety margin against overvoltage -Improved efficiency all load conditions -Increased efficiency compared to Silicon Diode alternatives -Reduction of Heat Sink Requirements -Parallel Devices Without Thermal Runaway -Essentialy No Switching Losses.

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Published: Dec 28, 2018 |