Description
This Power MOSFET is produced using Maple semi‘s advanced technology.
Features
- - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D2-PAK
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2).
MSI120N08G-MapleSemiconductor.pdf
