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MSI120N08G

80V N-Channel MOSFET

MSI120N08G Features

* - 120A, 80V, RDS(TYP) = 5.5mΩ@VGS = 10 V - Low gate charge ( typical 59 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR PD TJ, TST

MSI120N08G General Description

This Power MOSFET is produced using Maple semi‘s advanced technology. which provides high performance in on-state resistance, fast switching performance and excellent quality. MSP120N08G suitable device forSynchronous Rectification For Server and general purpose applications. LEAD FREE Pb RoHS Feat.

MSI120N08G Datasheet (758.38 KB)

Preview of MSI120N08G PDF

Datasheet Details

Part number:

MSI120N08G

Manufacturer:

Maple Semiconductor

File Size:

758.38 KB

Description:

80v n-channel mosfet.

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TAGS

MSI120N08G 80V N-Channel MOSFET Maple Semiconductor

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