SLS30L03T - N And P-Channel Enhancement Mode MOSFET

Maple Semiconductor

Datasheet Details

Part number	SLS30L03T
Manufacturer	Maple Semiconductor
File Size	777.29 KB
Description	N And P-Channel Enhancement Mode MOSFET
Datasheet	SLS30L03T-MapleSemiconductor.pdf

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology.

- N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - LowCrss ( typical 5.7pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability SOP-8 P-Channel N-Channel Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS PD R θJA TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - C.

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Published: Mar 17, 2025 |