SLS30L03T Datasheet - Maple Semiconductor

SLS30L03T N And P-Channel Enhancement Mode MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

SLS30L03T Features

* - N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - LowCrss ( typical 5.7pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability SOP-8 P-

SLS30L03T-MapleSemiconductor.pdf