SLS30L03T Datasheet - Maple Semiconductor

SLS30L03T - N And P-Channel Enhancement Mode MOSFET

This Power MOSFET is produced using Maple semi‘s advanced planar stripeTRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

SLS30L03T Features

* - N-Channel: 30V 6A RDS(on)Typ= 18.6mΩ@VGS = 10 V RDS(on))Typ= 30mΩ@VGS = 4..5V - P-Channel: -30V- 6A RDS(on))Typ= 27mΩ@VGS = 10 V RDS(on))Typ= 42mΩ@VGS = 4..5V - Very Low On-resistance RDS(ON) - LowCrss ( typical 5.7pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability SOP-8 P-

SLS30L03T-MapleSemiconductor.pdf

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Datasheet Details

Part number:

SLS30L03T

Manufacturer:

Maple Semiconductor

File Size:

777.29 KB

Description:

N and p-channel enhancement mode mosfet.

SLS30L03T Distributor

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SLS30L03T And P-Channel Enhancement Mode MOSFET Maple Semiconductor