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SLU830UZ

N-Channel MOSFET

SLU830UZ Features

* - 4.5A, 550V, RDS(on) typ. = 1.0Ω@VGS = 10V - Low gate charge ( typical 16.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GS D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ

SLU830UZ General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLU830UZ Datasheet (301.13 KB)

Preview of SLU830UZ PDF

Datasheet Details

Part number:

SLU830UZ

Manufacturer:

Maple Semiconductor

File Size:

301.13 KB

Description:

N-channel mosfet.

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SLU830UZ N-Channel MOSFET Maple Semiconductor

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