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SLU8N60U

N-Channel MOSFET

SLU8N60U Features

* - 7.5A, 600V, RDS(on) = 1.3Ω@VGS = 10 V - Low gate charge ( typical 32nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D-PAK I-PAK G GS GDS S Absolute Maximum Ratings TC = 25℃ unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD T

SLU8N60U General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLU8N60U Datasheet (325.26 KB)

Preview of SLU8N60U PDF

Datasheet Details

Part number:

SLU8N60U

Manufacturer:

Maple Semiconductor

File Size:

325.26 KB

Description:

N-channel mosfet.

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SLU8N60U N-Channel MOSFET Maple Semiconductor

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