ME2301A-G Datasheet | Matsuki

P-Channel 20V (D-S) MOSFET ME2301A/ ME2301A-G GENERAL DESCRIPTION The ME2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Features - RDS(ON) ≦75mΩ@VGS=-4.5V - RDS(ON) ≦95mΩ@VGS=-2.5V - RDS(ON) ≦130mΩ@VGS=-1.8V - Super high density...