ME2345AS-G Datasheet | Matsuki

P-Channel 30-V (D-S) MOSFET ME2345AS/ME2345AS-G GENERAL DESCRIPTION The ME2345AS is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOT-23) Top View Features - RDS(ON) ≦65mΩ@VGS=-10V - RDS(ON) ≦75mΩ@VGS=-4.5V - RDS(ON) ≦105mΩ@VGS=-2.5V -...