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ME2N7002F1W N-Channel MOSFET

ME2N7002F1W Description

ME2N7002F1W/ME2N7002F1W -G N-Channel 60V (D-S) MOSFET, ESD Protection GENERAL .
The ME2N7002F1W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME2N7002F1W Features

* RDS(ON)≦8Ω@VGS=4V
* RDS(ON)≦13Ω@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)

ME2N7002F1W Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (SOT-323) Top View Ordering Information:ME2N7002F1W (Pb-free) ME2N7002F1W-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage

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Datasheet Details

Part number
ME2N7002F1W
Manufacturer
Matsuki
File Size
858.35 KB
Datasheet
ME2N7002F1W-Matsuki.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Matsuki
Matsuki ME2N7002F1W-like datasheet