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K1606 2SK1606

K1606 Description

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s .

K1606 Applications

* 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Ratings

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Datasheet Details

Part number
K1606
Manufacturer
Matsushita Electric
File Size
66.46 KB
Datasheet
K1606_MatsushitaElectric.pdf
Description
2SK1606

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Matsushita Electric K1606-like datasheet