K1606 - 2SK1606

Features

q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s.

Matsushita Electric

Datasheet Details

Part number	K1606
Manufacturer	Matsushita Electric
File Size	66.46 KB
Description	2SK1606
Datasheet	K1606 Datasheet
Additional preview pages of the K1606 datasheet.

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Full PDF Text Transcription

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Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±8 ±16 130 50 2 150 −55 to +150 Unit V V A A mJ 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.

Published: Nov 3, 2007 |