Part number:
48SD6404
Manufacturer:
Maxwell Technologies
File Size:
649.88 KB
Description:
256mb sdram.
48SD6404 Datasheet (649.88 KB)
Rating:
1
★
(4 votes)
* 256 Megabit ( 16-Meg X 4-Bit X 4-Banks)
* RAD-PAK® radiation-hardened against natural space radiation
* Total Dose Hardness: >100 krad (Si), depending upon space mission
* Excellent Single Event Effects: SELTH > 85 MeV/mg/cm2 @ 25° C DESCRIPTION: Maxwell Technolog
48SD6404 Datasheet (649.88 KB)
48SD6404
Maxwell Technologies
649.88 KB
256mb sdram.
📁 Related Datasheet
48SD1616 - 256Mb SDRAM
(Maxwell Technologies)
48SD1616
256 Mb SDRAM
..
4-Meg X 16-Bit X 4-Banks
Logic Diagram (One Amplifier)
Memory
FEATURES:
• 256 Megabit ( 4-Meg X 16-Bit X.
48SD3208 - 256Mb SDRAM
(Maxwell Technologies)
48SD3208
256 Mb SDRAM
..
8-Meg X 8-Bit X 4-Banks
Logic Diagram (One Amplifier)
Memory
FEATURES:
• 256 Megabit ( 8-Meg X 8-Bit X 4.
48-12-xxx-xxx - Miniature Power Relay
(OEN)
48
MINIATURE POWER RELAY
• • • • • • • International Standard Foot Print Compact High Performance Direct PCB type Dust Protected / Sealed Creepage dis.
48-20PU - 8-bit Microcontroller
(ATMEL Corporation)
Features
• High Performance, Low Power AVR® 8-Bit Microcontroller • Advanced RISC Architecture
– 131 Powerful Instructions – Most Single Clock Cycle E.
48-24-xxx-xxx - Miniature Power Relay
(OEN)
48
MINIATURE POWER RELAY
• • • • • • • International Standard Foot Print Compact High Performance Direct PCB type Dust Protected / Sealed Creepage dis.
48-48-xxx-xxx - Miniature Power Relay
(OEN)
48
MINIATURE POWER RELAY
• • • • • • • International Standard Foot Print Compact High Performance Direct PCB type Dust Protected / Sealed Creepage dis.
4800AGM - N-Channel 30V MOSFET
(VBsemi)
4800AGM-VB
4800AGM-VB Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.008 at VGS= 10 V
0.011 at .
4800B - N-Channel MOSFET
(Vishay)
Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.0185 at VGS = 10 V
0.030 at VGS .
