Click to expand full text
www.DataSheet.co.kr
MI3407
P-Channel 30V (D-S ) MOSFET General Description
This miniature surface monut MOSFET uses advanced t rench process , low R DS ( on ) assures minimal power loss and energy conversion , which makes this device ideal for use in power managementcircuit.
Features
V DS (V) = -30V I D (A) = -4A (V GS = -10V) R DS(on) = 0.060 ohm @ V GS = -10V R DS(on) = 0.090 ohm@ V GS = -4.5V
Low gate charge Fast switching speed
Applications
Load switch DC - DC converters Power management
D S G
SOT-23
G
D
S
Absolute Maximum Ratings (T A = 25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current
b a
Symbol V DS V GS T A =25℃ T A =70℃ ID I DM IS T A =25℃ T A =70℃ PD T J ,T stg
Maximum
Units V
- 30
±20
-4 -3.