93C76 Datasheet | Microchip Technology

FEATURES - Single 5.0V supply - Low power CMOS technology - 1 m A active current typical - ORG pin selectable memory configuration 1024 x 8- or 512 x 16-bit organization (93C76) 2048 x 8- or 1024 x 16-bit organization (93C86) - Self-timed ERASE and WRITE cycles (including auto-erase) - Automatic ERAL before WRAL - Power on/off data protection circuitry - Industry standard 3-wire serial I/O - Device status signal during ERASE/WRITE cycles - Sequential READ function - 10,000,000 ERASE/WRITE cycles guaranteed - Data retention > 200 years - 8-pin PDIP/SOIC package - Temperature ranges supported - mercial (C): 0°C to +70°C - Industrial -40°C to +85°C - Automotive (E) -40°C to +125°C PACKAGE TYPES DIP Package CS CLK DI DO 1 2 3 4 8 7 6 5 VCC PE ORG VSS 93C76/86 SOIC Package 1 2 3 4 8 7 6 5 CS CLK DI DO VCC PE ORG VSS 93C76/86 BLOCK DIAGRAM VCC VSS DESCRIPTION The Microchip Technology Inc. 93C76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power non-volatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93C76/86 is available in standard 8-pin DIP and 8pin surface mount SOIC packages. Memory Array Address Decoder Address Counter Data Register Output...