MSC010SDA070BCT Datasheet 10a Silicon Carbide Schottky Dual Diode

Manufacturer: Microchip Technology

Overview: MSC010SDA070BCT 700V, 10A Silicon Carbide Schottky Dual Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070BCT device is a 700 V, 10 A SiC dual common cathode SBD in a three-lead TO-247 package.

Datasheet Details

Part number	MSC010SDA070BCT
Manufacturer	Microchip Technology
File Size	2.24 MB
Description	10A Silicon Carbide Schottky Dual Diode
Datasheet	MSC010SDA070BCT-Microchip.pdf

Key Features

The following are key features of the MSC010SDA070BCT device:.
No reverse recovery.
Low forward voltage.
Low leakage current.
Avalanche-energy rated.
RoHS compliant Benefits The following are benefits of the MSC010SDA070BCT device:.
High switching frequency.
Low switching losses.
Low noise (EMI) switching.
Higher reliability systems.
Increased system power density.

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