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MSC010SDA070BCT - 10A Silicon Carbide Schottky Dual Diode

Features

  • The following are key features of the MSC010SDA070BCT device:.
  • No reverse recovery.
  • Low forward voltage.
  • Low leakage current.
  • Avalanche-energy rated.
  • RoHS compliant Benefits The following are benefits of the MSC010SDA070BCT device:.
  • High switching frequency.
  • Low switching losses.
  • Low noise (EMI) switching.
  • Higher reliability systems.
  • Increased system power density.

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Datasheet preview – MSC010SDA070BCT

Datasheet Details

Part number MSC010SDA070BCT
Manufacturer Microchip
File Size 2.24 MB
Description 10A Silicon Carbide Schottky Dual Diode
Datasheet download datasheet MSC010SDA070BCT Datasheet
Additional preview pages of the MSC010SDA070BCT datasheet.

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Full PDF Text Transcription

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MSC010SDA070BCT 700V, 10A Silicon Carbide Schottky Dual Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC010SDA070BCT device is a 700 V, 10 A SiC dual common cathode SBD in a three-lead TO-247 package.
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