VN0106 Datasheet - Microchip

N-Channel Vertical DMOS FET

VN0106 Features

* Free from Secondary Breakdown

* Low Power Drive Requirement

* Ease of Paralleling

* Low CISS and Fast Switching Speeds

* Excellent Thermal Stability

* Integral Source-Drain Diode

* High Input Impedance and High Gain Applications

* Mot

VN0106 General Description

The VN0106 Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient .

VN0106 Datasheet (752.53 KB)