MT29F64G08CECCB, MT29F32G08CBACA Datasheet - Micron

MT29F64G08CECCB, MT29F32G08CBACA, NAND Flash Memory

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.
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MT29F32G08CBACA-Micron.pdf

MT29F64G08CECCB Datasheet Preview — This datasheet PDF includes multiple part numbers: MT29F64G08CECCB, MT29F32G08CBACA. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MT29F64G08CECCB, MT29F32G08CBACA

Manufacturer:

Micron

File Size:

3.14 MB

Description:

NAND Flash Memory

Note:

This datasheet PDF includes multiple part numbers: MT29F64G08CECCB, MT29F32G08CBACA.
Please refer to the document for exact specifications by model.

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1
* Meets MSL level 1, per J-STD-020C, LF max peak o

Applications

* TO-263AB K K TO-262AA 2 1 1 VB40100C PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA Epoxy meets UL 94

MT29F64G08CECCB Distributors

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MT29F32G08CBACA NAND Flash Memory Micron

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