2N2150
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277 Devices 2N2150 2N2151 Qualified Level JANTX
MAXIMUM RATINGS (TC = 250C unless otherwise noted) Ratings Symbol Value
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Tc = +1000C(1) Operating & Storage Junction Temperature Range VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC 100 150 8.0 2.0 2.0 30 -65 to +200 Max. 3.3
Units
Vdc Vdc Vdc Adc Adc W
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly @ 0.3 W/0C for TC > +1000C
Unit C/W
TO-111-
- See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = +250C)
Characteristics Symbol V(BR)CEO VCBO ICEO ICBO ICEX IEBO ICES Min. 100 150 10 5.0 5.0 2.0 5.0 Max. Unit Vdc Vdc µAdc µAdc µAdc µAdc µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 50 m Adc Collector-Emitter Breakdown Voltage IC = 100 µAdc Collector-Emitt...
