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2N6052, 2N6051 Datasheet - Microsemi Corporation

2N6052 PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N6051 80 80 2N6052 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 www.DataSheet4U.com @ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature.

2N6051_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: 2N6052, 2N6051. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N6052, 2N6051

Manufacturer:

Microsemi ↗ Corporation

File Size:

75.69 KB

Description:

Pnp darlington power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N6052, 2N6051.
Please refer to the document for exact specifications by model.

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2N6052 2N6051 PNP DARLINGTON POWER SILICON TRANSISTOR Microsemi Corporation

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