APT60GA60JD60 High Speed PT IGBT

Microsemi Corporation

Description

APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.Low Eoff is achieved 27 -2 C G through lead.

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Datasheet Specifications

Part number: APT60GA60JD60
Manufacturer: Microsemi ↗ Corporation
File Size: 385.85 KB
Datasheet: APT60GA60JD60_MicrosemiCorporation.pdf
Description: High Speed PT IGBT

Features

* Fast switching with low EMI
* Very Low Eoff for maximum efﬁciency
* Ultra low Cres for improved noise immunity
* Low conduction loss
* Low gate charge
* Increased intrinsic gate resistance for low EMI

Applications

* ZVS phase shifted and other full bridge
* Half bridge
* High power PFC boost
* Welding
* UPS, solar, and other inverters
* High frequency, high efﬁciency industrial Absolute Maximum Ratings Symbol Vces IC1 IC2 ICM VGE Parameter Collector Emitter Vo

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APT60GA60JD60 High Speed IGBT Microsemi Corporation

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