APT60GA60JD60 Datasheet (Microsemi Corporation)

APT60GA60JD60, High Speed PT IGBT

APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.

Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes.

A reduced Eoff T SO VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies.

Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive.

The intrinsic chip gate res

APT60GA60JD60 Features

* Fast switching with low EMI

* Very Low Eoff for maximum efﬁciency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS