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APT60GA60JD60 Datasheet - Microsemi Corporation

APT60GA60JD60 High Speed PT IGBT

APT60GA60JD60 600V High Speed PT IGBT ® E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 27 -2 C G through leading technology silicon design and lifetime control processes. A reduced Eoff T SO VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short "UL Recognized" ISOTOP ® delay times and simple gate drive. The intrinsic chip gate res.

APT60GA60JD60 Features

* Fast switching with low EMI

* Very Low Eoff for maximum efficiency

* Ultra low Cres for improved noise immunity

* Low conduction loss

* Low gate charge

* Increased intrinsic gate resistance for low EMI

* RoHS compliant TYPICAL APPLICATIONS

APT60GA60JD60 Datasheet (385.85 KB)

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Datasheet Details

Part number:

APT60GA60JD60

Manufacturer:

Microsemi ↗ Corporation

File Size:

385.85 KB

Description:

High speed pt igbt.

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APT60GA60JD60 High Speed IGBT Microsemi Corporation

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