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APTC80H15T1G Full - Bridge Super Junction MOSFET

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Description

APTC80H15T1G Full - Bridge Super Junction MOSFET Power Module 3 Q1 5 Q2 7 4 Q3 2 Q4 9 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C .

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Features

* - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 6 1 8 11 NTC 10
* 12
* Pins 3/4

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Microsemi Corporation APTC80H15T1G-like datasheet