APTGF180DH60G Asymmetrical - bridge NPT IGBT Power Module

Microsemi Corporation

Description

APTGF180DH60G Asymmetrical - bridge NPT IGBT Power Module VBUS Q1 G1 CR3 www.DataSheet4U.com VCES = 600V IC = 180A @ Tc = 80°C Application *.

📥 Download Datasheet

APTGF180DH60G Datasheet Preview — Preview of APTGF180DH60G PDF

Datasheet Specifications

Part number: APTGF180DH60G
Manufacturer: Microsemi ↗ Corporation
File Size: 301.85 KB
Datasheet: APTGF180DH60G_MicrosemiCorporation.pdf
Description: Asymmetrical - bridge NPT IGBT Power Module

Features

* Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
* Kelvin emitter for easy drive
* Very low stra

APTGF180DH60G Distributors

📁 Related Datasheet

APTGF180DU60T APTGF180A60T APTGF180H60 APTGF180SK60T APTGF100A120T APTGF100DA120T

📌 All Tags

APTGF180DH60G Asymmetrical bridge NPT IGBT Power Module Microsemi Corporation

Microsemi Corporation APTGF180DH60G-like datasheet