Datasheet Specifications
- Part number
- APTGT50DH60T1G
- Manufacturer
- Microsemi ↗ Corporation
- File Size
- 229.52 KB
- Datasheet
- APTGT50DH60T1G_MicrosemiCorporation.pdf
- Description
- Power-Module IGBT
Description
www.DataSheet4U.com APTGT50DH60T1G Asymmetrical - Bridge Trench + Field Stop IGBT Power Module VCES = 600V IC = 50A * @ Tc = 80°C Application
Features
* Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA ratedAPTGT50DH60T1G Distributors
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