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APTGT50H60T3G - Power-Module IGBT

Product Overview

Microsemi Corporation

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APTGT50H60T3G Power-Module IGBT by Microsemi Corporation - Datasheet Preview — Datasheet preview – APTGT50H60T3G

Datasheet Details

Part number	APTGT50H60T3G
Manufacturer	Microsemi Corporation
File Size	286.24 KB
Description	Power-Module IGBT
Datasheet	APTGT50H60T3G Datasheet
Additional preview pages of the APTGT50H60T3G datasheet.

Product details

Features

Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated.
Kelvin emitter for easy drive.
Very low stray inductance - Symmetrical design.
High level of integration.
Internal thermistor for temperature monitoring Benefits.
Stable temperature behavior.
Very rugged.

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Published: Apr 11, 2010 |