APTGT75DDA60T3G
APTGT75DDA60T3G is Power-Module IGBT manufactured by Microsemi.
Features
- Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 k Hz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Kelvin emitter for easy drive
- Very low stray inductance
- Symmetrical design
- High level of integration
- Internal thermistor for temperature monitoring Benefits
- Stable temperature behavior
- Very rugged
- Solderable terminals for easy PCB mounting
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- Easy paralleling due to positive TC of VCEsat
- Low profile
- Each leg can be easily paralleled to achieve a single boost of twice the current capability.
- Ro HS pliant
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector
- Emitter Breakdown Voltage Continuous Collector Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 150°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on .microsemi.
.microsemi.
1-6
- Rev 1,
Pulsed Collector Current Gate
- Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating...
