BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation

Description

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 BFR96 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Feat.
Designed primarily for use in high-gain, low noise, small-signal amplifiers.

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Datasheet Specifications

Part number: BFR96
Manufacturer: Microsemi ↗ Corporation
File Size: 171.54 KB
Datasheet: BFR96_MicrosemiCorporation.pdf
Description: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features

* High Current-Gain
* Bandwidth Product, fT = 4.5 GHz (typ) @ IC = 50 mA Low Noise Figure
* NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain

Applications

* requiring fast switching times. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 100ºC Derate a

BFR96 Distributors

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BFR96 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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