JAN2N5039, JAN2N5038 Datasheet - Microsemi Corporation

JAN2N5039 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 7.0 5.0 20 140 -65 to +200 Max. 1.25 C THERMAL CHARAC.

JAN2N5038_MicrosemiCorporation.pdf

JAN2N5039 Datasheet Preview — This datasheet PDF includes multiple part numbers: JAN2N5039, JAN2N5038. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

JAN2N5039, JAN2N5038

Manufacturer:

Microsemi ↗ Corporation

File Size:

55.42 KB

Description:

(jan2n5038 / jan2n5039) npn high power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: JAN2N5039, JAN2N5038.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

JAN2N5038 (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR (Microsemi Corporation)

JAN2N5415 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR (Microsemi Corporation)

JAN2N5416 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR (Microsemi Corporation)

JAN2N559-1 PNP Transistor (Motorola)

JAN2N559-2 PNP Transistor (Motorola)

JAN2N559-3 PNP Transistor (Motorola)

JAN2N5683 (JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR (Microsemi Corporation)

JAN2N5684 (JAN2N5683 / JAN2N5684) NPN POWER SILICON TRANSISTOR (Microsemi Corporation)

TAGS

JAN2N5039 JAN2N5038 JAN2N5038 JAN2N5039 NPN HIGH POWER SILICON TRANSISTOR Microsemi Corporation

JAN2N5039 Distributor