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JAN2N5039, JAN2N5038 Datasheet - Microsemi Corporation

JAN2N5039 - (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IB IC PT Top, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vdc Adc Adc W 0 7.0 5.0 20 140 -65 to +200 Max.

1.25 C THERMAL CHARAC

JAN2N5038_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: JAN2N5039, JAN2N5038. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

JAN2N5039, JAN2N5038

Manufacturer:

Microsemi ↗ Corporation

File Size:

55.42 KB

Description:

(jan2n5038 / jan2n5039) npn high power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: JAN2N5039, JAN2N5038.
Please refer to the document for exact specifications by model.

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