JAN2N5039
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IB IC PT Top, Tstg
2N5038
90 150
2N5039
75 125
Units
Vdc Vdc Vdc Adc Adc W
7.0 5.0 20 140 -65 to +200 Max. 1.25
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 m W/0C for TC > +250C
Unit C/W
TO-3- (TO-204AA)
- See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 m Adc Emitter-Base Breakdown Voltage IE = 25 m Adc Collector-Base Cutoff Current VCE = 150 Vdc VCE = 125 Vdc Collector-Base Cutoff Current VCE = 70...
