JAN2N5415
TECHNICAL DATA
PNP LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range
Symbol
VCEO VCBO VEBO IC PT Top, Tstg
2N5415
200 200
2N5416
300 350
Units
Vdc Vdc Vdc Adc W W 0 C Unit C/W
6.0 1.0 0.75 10 -65 to +200 Max. 17.5
TO- 5-
2N5415, 2N5416
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 4.28 m W/0C for TA > +250C 2) Derate linearly 57.1 m W/0C for TC > +250C
2N5415S, 2N5416S
TO-39- (TO-205AD)
- See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc...
