JAN2N5415, JAN2N5416 Datasheet - Microsemi Corporation

JAN2N5415 (JAN2N5415 / JAN2N5416) PNP LOW POWER SILICON TRANSISTOR

TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices 2N5415 2N5415S 2N5416 2N5416S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N5415 200 200 2N5416 300 350 Units Vdc Vdc Vdc Adc W W 0 C Unit C/W 6.0 1.0 0.75 10 -65 to +200 Max. 17..

JAN2N5416_MicrosemiCorporation.pdf

JAN2N5415 Datasheet Preview — This datasheet PDF includes multiple part numbers: JAN2N5415, JAN2N5416. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

JAN2N5415, JAN2N5416

Manufacturer:

Microsemi ↗ Corporation

File Size:

67.52 KB

Description:

(jan2n5415 / jan2n5416) pnp low power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: JAN2N5415, JAN2N5416.
Please refer to the document for exact specifications by model.

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JAN2N5415 JAN2N5416 JAN2N5415 JAN2N5416 PNP LOW POWER SILICON TRANSISTOR Microsemi Corporation

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