1011GN-125E - Earless Driver GaN Transistor

Datasheet Summary

Features

1030-1090MHz.
125W Pulsed Output Power.
128µs-1mS, 10% Pulsing.
Common Source.
Class AB.
50VDD Bias Voltage.
>70% Efficiency Across the Frequency Band.
Extremely Compact Size.
18.7 dB Typical Power Gain.
0.1 dB Typical Excellent Gain Flatness.
IFF, Mode-S, TCAS Avionics Secondary Radars.
All gold metallization and eutectic die attach for highest reliability.
50Ω in/out lumped element very small footprint plug & pla.

Microsemi

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Datasheet Details

Part number	1011GN-125E
Manufacturer	Microsemi
File Size	524.64 KB
Description	Earless Driver GaN Transistor
Datasheet	1011GN-125E Datasheet
Additional preview pages of the 1011GN-125E datasheet.

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1011GN-125E/EL/EP 125 Watts • 50 Volts • 128us, 10% 1030-1090MHz E Class Earless Driver GaN Transistor – Key Features  1030-1090MHz • 125W Pulsed Output Power • 128µs-1mS, 10% Pulsing  Common Source • Class AB • 50VDD Bias Voltage  >70% Efficiency Across the Frequency Band  Extremely Compact Size  18.7 dB Typical Power Gain  0.1 dB Typical Excellent Gain Flatness  IFF, Mode-S, TCAS Avionics Secondary Radars  All gold metallization and eutectic die attach for highest reliability  50Ω in/out lumped element very small footprint plug & play pallets available CASE/PALLET OUTLINES 55-QQP (0.160”x0.

Published: Nov 30, 2024 |