1011GN-125E Datasheet - Microsemi

1011GN-125E Earless Driver GaN Transistor

1011GN-125E Features

* 1030-1090MHz

* 125W Pulsed Output Power

* 128µs-1mS, 10% Pulsing

* Common Source

* Class AB

* 50VDD Bias Voltage

* >70% Efficiency Across the Frequency Band

* Extremely Compact Size

* 18.7 dB Typical Power Gain

* 0.1 dB Typical Excellent Gain

Datasheet Details

1011GN-125E

524.64 KB

Earless driver gan transistor.

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TAGS

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