Datasheet Details
| Part number | 3135GN-280LV |
|---|---|
| Manufacturer | Microsemi ↗ |
| File Size | 142.22 KB |
| Description | S-Band Radar |
| Datasheet |
 3135GN-280LV-Microsemi.pdf
|
| Part number | 3135GN-280LV |
|---|---|
| Manufacturer | Microsemi ↗ |
| File Size | 142.22 KB |
| Description | S-Band Radar |
| Datasheet |
3135GN-280LV-Microsemi.pdf
|
The 3135GN-280LV is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 13 dB gain, 280 Watts of pulsed RF output power at 200 S pulse width, 20% duty factor across the 3100 to 3500 MHz band.This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.Market Application High Power S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation D
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