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APTC60DHM35T3G Asymmetrical Bridge Super Junction MOSFET Power Module

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Description

APTC60DHM35T3G Asymmetrical bridge Super Junction MOSFET Power Module 13 14 Q1 CR3 VDSS = 600V RDSon = 35mΩ max @ Tj = 25°C ID = 72A @ Tc = 25°C Appl.

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Features

* - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 18 22 19 7 23 8 Q4 CR2 4 3

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Asymmetrical Bridge Super Junction MOSFET Power Module Microsemi
Microsemi APTC60DHM35T3G-like datasheet