The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material.
These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.
The NIP diode is
GC4312 Features
* Available as packaged devices or as chips for hybrid applications
* Low Loss
* Suitable for applications to 18Ghz
* High Speed
* Low Insertion Loss
* High Isolation
* Reverse Polarity for Applications with special Bias Considerations
* RoHS Compliant 1 APPLICATIONS/
Datasheet Details
GC4312, GC4310
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High speed nip diodes.
This datasheet PDF includes multiple part numbers: GC4312, GC4310.
Please refer to the document for exact specifications by model.
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