GC4324 Datasheet, Diodes, Microsemi

GC4324 Features

  • Diodes
  • Available as packaged devices or as chips for hybrid applications
  • Low Loss
  • Suitable for applications to 18Ghz
  • High Speed
  • Low Insertion

PDF File Details

Part number:

GC4324

Manufacturer:

Microsemi ↗

File Size:

182.88kb

Download:

📄 Datasheet

Description:

High speed nip diodes. The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes

Datasheet Preview: GC4324 📥 Download PDF (182.88kb)
Page 2 of GC4324 Page 3 of GC4324

GC4324 Application

  • Applications The GC4300 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators exte

TAGS

GC4324
High
Speed
NIP
Diodes
Microsemi

📁 Related Datasheet

GC4320 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4321 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4322 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4323 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4325 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4310 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4311 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4312 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4313 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

GC4314 - High Speed NIP Diodes (Microsemi)
.MICROSEMI. ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon mat.

Stock and price

Stancor
Transformer, chas mt, 115/230V, 24VCT@1.8A, 12V@3.6A Stancor TGC43-24
RS
TGC43-24
0 In Stock
Qty : 4 units
Unit Price : $22.28
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts