GC4375

High Speed NIP Diodes

Microsemi

GC4375 Features

* Available as packaged devices or as chips for hybrid applications

* Low Loss

* Suitable for applications to 18Ghz

* High Speed

* Low Insertion Loss

* High Isolation

* Reverse Polarity for Applications with special Bias Considerations

* RoHS Compliant 1 APPLICATIONS/

GC4375 General Description

The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is .

GC4375 Datasheet (182.88 KB)