* DIRECT REPLACEMENT FOR SILICONIX 2N5019 ZERO OFFSET VOLTAGE LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) rDS(on) ≤ 150Ω Maximum Temperatures Storage Temperature ‐55°C to +200°C
* Low Insertion Loss Operating Junction Temperature ‐55°C to +200°C
2N5019
Micross
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P-channel jfet.
2N5019 P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5019
The 2N5019 is a single P-Channel JFET switch
This p-channel analog switch.
📁 Related Datasheet
2N5010 - SILICON EPITAXIAL NPN TRANSISTOR
(Seme LAB)
2N5010
MECHANICAL DATA Dimensions in mm (inches)
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
SILICON EPITAXIAL NPN T.
2N5012 - Bipolar NPN Device
(Seme LAB)
2N5012
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N5013 - 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
(ETC)
.
2N5013 - Bipolar NPN Device
(Seme LAB)
2N5013
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
2N5014 - SILICON EPITAXIAL NPN TRANSISTOR
(Seme LAB)
2N5014
MECHANICAL DATA Dimensions in mm (inches)
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
SILICON EPITAXIAL NPN TRANSISTOR
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3.
2N5014 - 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
(ETC)
.
2N5015 - 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
(ETC)
.
2N5015 - Bipolar NPN Device
(Seme LAB)
2N5015
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package..
