ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET

Micross

Description

ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET .

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Datasheet Specifications

Part number: ASJD1200R085
Manufacturer: Micross
File Size: 227.35 KB
Datasheet: ASJD1200R085-Micross.pdf
Description: Normally-ON Trench Silicon Carbide Power JFET

Features

* Die Inside
* Hermetic TO-258 Packaging
* 200°C Maximum Operating Temperature (260oC Contact Factory)
* Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions
* Inherent Radiation Tolerance >100K TID
* Positiv

Applications

* Satellite Solar Inverters
* Mil Spec Power Supplies TO-258 - Switch Mode - Uninterrupted
* Jet Engine Electronics
* Down-hole Electronics (Motor / Compressor Control) 123 S (3) Internal Schematic Non-isolated tab version shown. For isolated

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ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET Micross

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