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ASJD1200R085 - Normally-ON Trench Silicon Carbide Power JFET

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Micross

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ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET by Micross - Datasheet Preview — Datasheet preview – ASJD1200R085

Datasheet Details

Part number	ASJD1200R085
Manufacturer	Micross
File Size	227.35 KB
Description	Normally-ON Trench Silicon Carbide Power JFET
Datasheet	ASJD1200R085 Datasheet
Additional preview pages of the ASJD1200R085 datasheet.

Product details

Features

Die Inside.
Hermetic TO-258 Packaging.
200°C Maximum Operating Temperature (260oC Contact Factory).
Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions.
Inherent Radiation Tolerance >100K TID.
Positive Temperature Coefﬁcient for Ease of Paralleling.
Extremely Fast Switching with No “Tail” Current at 150°C.
1200 Volt Drain-Source Blocking Voltage.
RDS(on)max of 0.085 .

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Published: Feb 10, 2017 |