* DIRECT REPLACEMENT FOR INTERSIL LS3N170 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25°C (unless otherwise noted) rDS(on) ≤ 200Ω td(on) ≤ 3.0ns Maximum Temperatures Storage Temperature Operating Junction Temperature LS3N170 Features: Maximum Power Di
LS3N170
Micross
290.42 KB
High speed switch.
LS3N170 N-CHANNEL MOSFET
The LS3N170 is an enhancement mode N-Channel Mosfet
The LS3N170 is an enhancement mode N-Channel Mosfet designed for use as .
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