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XB1006 GaAs MMIC Buffer Amplifier

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Description

18.0-38.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1006 Chip Device Layout .
Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temper.

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Datasheet Specifications

Part number
XB1006
Manufacturer
Mimix Broadband
File Size
0.96 MB
Datasheet
XB1006_MimixBroadband.pdf
Description
GaAs MMIC Buffer Amplifier

Features

* High Dynamic Range/Positive Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 3.2 dB Noise Figure at Low Noise Bias +15 dBm P1dB Compression Point at Power Bias 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-

Applications

* Parameter Frequency Range (f ) Input Return Loss (S11) 3 Output Return Loss (S22) 3 Small Signal Gain (S21)3 Gain Flatness (∆S21) Reverse Isolation (S12) 3 Noise Figure (NF) 4 Output Power for 1 dB Compression (P1dB) 1,2,3 Output Third Order Intercept Point (OIP3) 1,2,3 Saturated Output Power (Psat

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