MNA-2W+ Datasheet - Mini-Circuits

MNA-2W+ Monolithic Amplifier

DUT ESD Protection Diodes ESD Protection Diodes Function RF-IN RF-OUT DC NC GND OPTIONAL Pad Number 2 5 7,8 1,3,4,6 Paddle 1,6 Description (See Fig 1) RF input pin RF output pin DC Bias pads 7,8. Pad 7 connected to ground via 1000 pF. Pad 8 connected to pad 7 via 33.2 ohms. Not Connected, conne.

HIGH DIRECTIVITY Monolithic Amplifier 50Ω 0.5 to 4.5 GHz MNA-2W+ THE BIG DEAL y Integrated matching, DC Blocks and bias circuits y Excellent Active Directivity, +21 dB typ. at 2.5 GHz and 5V y Choice of supply voltage, +2.8V to +5V y Micro-miniature size .120”X.120” y Output power, +17.5 dBm typ. at 2.5 GHz and 5V y Aqueous washable Generic photo used for illustration purposes only CASE STYLE: DQ849 APPLICATIONS y Buffer amplifier y Cellular infrastructure y Communications satellite y Defens.

MNA-2W+ Features

* Feature Excellent Active Directivity (Isolation- Gain) 21-36 dB Integrates DC blocks and RF choke Single +2.8 to +5V operation 3 x 3mm 8-lead MCLP package Advantages Ideal for use as a buffer amplifier minimizing interaction of adjacent circuits Minimizes external components, component count and ci

MNA-2W+ Datasheet (422.40 KB)