A35H1516M Datasheet - Mitsubishi Electric Semiconductor

A35H1516M RA35H1516M

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the .

A35H1516M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 66 x 21 x 9.88 mm

* Linear operation is possible by setting the quiescent drai

A35H1516M Datasheet (112.99 KB)