A35H1516M Datasheet, Ra35h1516m, Mitsubishi Electric Semiconductor

✔ A35H1516M Features

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
Pout>40W, ηT>50% @ VDD=12.5V, VGG=5V, Pin=50mW
Low-Power Control Current IGG=1mA (typ) at VGG=5V
M

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A35H1516M

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Mitsubishi Electric Semiconductor

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📄 Datasheet

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ra35h1516m. The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The bat

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Stock and price

Mitsubishi Electric

RF & Microwave

Vyrian

RA35H1516M

353 In Stock

Unit Price : $0

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A35H1516M RA35H1516M Mitsubishi Electric Semiconductor