BCR3KM
Mitsubishi Electric Semiconductor
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Triac.
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BCR3KM-12 - Triac
(Renesas Technology)
BCR3KM-12
Triac
Low Power Use
REJ03G0312-0200 Rev.2.00 Nov.09.2004
Features
• IT(RMS) : 3 A • VDRM : 600 V .. • IFGT I, IRGT I, IRGT.
BCR3KM-12 - Triac
(KERSEMI)
Features
• IT(RMS) : 3 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3
Outline
TO-220FN
1 23
BCR3KM-12
• Insulated Type • Planar .
BCR3KM-12LA - Triac
(Renesas Technology)
BCR3KM-12LA
Triac
Low Power Use
REJ03G0313-0100 Rev.1.00 Aug.20.2004
Features
• IT (RMS) : 3 A • VDRM : 600 V .. • IFGTI , IRGTI, IR.
BCR3KM-12LA - Triac
(KERSEMI)
Features
• IT (RMS) : 3 A • VDRM : 600 V • IFGTI , IRGTI, IRGTⅢ : 20 mA (10 mA)Note5 • Viso : 2000 V
Outline
TO-220FN
1 23
BCR3KM-12LA
• Insulated Ty.
BCR3KM-12LB - Triac
(Renesas Technology)
BCR3KM-12LB
Triac
Low Power Use
REJ03G0314-0100 Rev.1.00 Aug.20.2004
Features
• IT (RMS) : 3 A • VDRM : 600 V .. • IFGTI , IRGTI, IR.
BCR3KM-14 - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC 〉
BCR3KM-14
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM-14
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± .
BCR3KM-14L - Triac
(Renesas)
BCR3KM-14L
Triac
Low Power Use
Features
• IT (RMS) : 3 A • VDRM : 700 V • IFGTI, IRGTI, IRGTⅢ : 30 mA • Viso : 2000 V
Outline
TO-220FN
1 23
REJ03G033.
BCR30AM - TRIAC
(Mitsubishi Electric Semiconductor)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR30AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR30AM
OUTLINE DRAWING
15.9 MAX 4
Dimension.
BCR30AM - TRIAC
(Powerex Power Semiconductors)
BCR30AM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
30 Ampere/400-600 Volts
OUTLINE DRAWING
C D лG E H.
BCR30AM-12LB - Triac
(Renesas)
BCR30AM-12LB
Triac
Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
Features
• IT(RMS) : 30 A • VDRM : 600 V • IFGT I,.