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CM100BU-12H - IGBT Module

Datasheet Summary

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Datasheet Details

Part number CM100BU-12H
Manufacturer Mitsubishi Electric Semiconductor
File Size 47.54 KB
Description IGBT Module
Datasheet download datasheet CM100BU-12H Datasheet
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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.5 V W X P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
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