CM200TU-12H - IGBT MODULES

Datasheet Summary

Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode.

Features

ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

Mitsubishi Electric Semiconductor

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Datasheet Details

Part number	CM200TU-12H
Manufacturer	Mitsubishi Electric Semiconductor
File Size	111.88 KB
Description	IGBT MODULES
Datasheet	CM200TU-12H Datasheet
Additional preview pages of the CM200TU-12H datasheet.

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Full PDF Text Transcription

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MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E H G E S K R (4 - Mounting Holes) L GuP EuP GvP EvP D C GwP EwP GuN EuN GvN EvN TC Measured Point u v TC Measured M Point GwN EwN w N 5 - M5 NUTS E H J E J H E K TAB#110 t=0.5 P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Published: Mar 23, 2005 |