CM75BU-12H
Description
Mitsubishi IGBT Modules are designed for use in switching applications.
Key Features
- (Tc = 25°C) Peak Emitter Current
- 310 1.3 ~ 1.7 2.5 ~ 3.5 390 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N
- m Grams Vrms
- Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating
- Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
- Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating
