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CM75BU-12H - IGBT Module

General Description

Mitsubishi IGBT Modules are designed for use in switching applications.

Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode.

Key Features

  • ٗ Low Drive Power ٗ Low VCE(sat) ٗ Discrete Super-Fast Recovery Free-Wheel Diode ٗ High Frequency Operation ٗ Isolated Baseplate for Easy Heat Sinking.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F E H E G R L S(4 - Mounting Holes) M GuP EuP D GvP EvP GuN EuN U V C TC Measured Point GvN EvN P TC Measured Point Q 4 - M4 NUTS J E J H K F G V T U N L TAB#110 t=0.5 V W X P Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of four IGBTs in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.