FS50VS-2, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS50VS-2
HIGH-SPEED SWITCHING USE
FS50VS-2
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± .
FS50VS-3, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS50VS-3
HIGH-SPEED SWITCHING USE
FS50VS-3
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8.6 ± .
FS50VSJ-03, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS50VSJ-03
HIGH-SPEED SWITCHING USE
FS50VSJ-03
OUTLINE DRAWING
1.5MAX.
r 10.5MAX.
Dimensions in mm
4.5 1.3
1.5MAX. 8..
FS50VSJ-06, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS50VSJ-06
HIGH-SPEED SWITCHING USE
FS50VSJ-06
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
r
10.5MAX.
4.5 1.3
1.5MAX..
FS50VSJ-2, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS50VSJ-2
HIGH-SPEED SWITCHING USE
FS50VSJ-2
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
4.5 1.3
r
10.5MAX.
1.5MAX. 8..
FS50VSJ-3, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS50VSJ-3
HIGH-SPEED SWITCHING USE
FS50VSJ-3
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
4.5 1.3
r
10.5MAX.
1.5MAX. 8..
FS50, Feeling Technology
FEELING TECHNOLOGY
LINEAR HALL-EFFECT SENSORS
Features
Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in .
FS500R17OE4D, Infineon
Technische Information / Technical Information
IGBT-Modul IGBT-Module
FS500R17OE4D
EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Control.