FU-427SHL-8M22 Datasheet - Mitsubishi Electric Semiconductor

FU-427SHL-8M22 1.3 um LD MODULE

FU-427SHL-8M22 Features

* High optical output power Emission wavelength is in 1.3 mm band MQW

* active layer FSBH

* structure fabricated by all MOCVD process

* Multiple quantum well

* Facet selective-growth buried heterostructure APPLICATION OTDR ABSOLUTE MAXIMUM RATINGS Parameter Laser diode Reverse v

Datasheet Details

FU-427SHL-8M22

Mitsubishi Electric Semiconductor

37.84 KB

1.3 um ld module.

FU-427SHL-8M22 Distributor

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