MGF4941CL Overview
Description
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified.
Key Features
- Low noise figure @ f=25.2GHz NFmin
- = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.) Fig.1
