MGF4941CL Datasheet | Mitsubishi Electric

DESCRIPTION The MGF4941CL super-low noise In Ga As HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101 qualified. Outline Drawing FEATURES Low noise figure @ f=25.2GHz NFmin. = 2.4d B (Typ.) High associated gain @ f=25.2GHz Gs = 10.0d B (Typ.) Fig.1 APPLICATION K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric REMENDED BIAS CONDITIONS VDS=1.5V, VGS=0V ORDERRING INFORMATION Tape & reel 4000pcs./reel .Data Sheet.net/ Ro HS PLIANT MGF4941CL is a Ro HS pliant product. Ro HS pliance is indicated by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature (Ta=25C ) Ratings -3 -3 55 75 125 -55 to +125 (Ta=25C ) Unit V V m A m W C C ELECTRICAL CHARACTERISTICS Symbol V(BR)GDO IGSS IDSS VGS(off) Gs Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Associated gain Test conditions MIN. IG=-10A VGS=-2V,VDS=0V VGS=0V,VDS=1.5V VDS=1.5V,ID=500A VDS=1.5V, -3 -15 -0.1 7.5 -- Limits TYP. ----10.0 2.4 MAX -50 60 -1.5 -3.8 Unit V A m A V d B d B VGS=0V,f=25.2GHz NFmin. Minimum noise figure Note: Gs and NFmin. are tested with sampling inspection. Publication Date : Jul., 2012 CSTG-14445 1 Datasheet pdf - http://..co.kr/ <Low Noise Ga As HEMT> Micro-X type plastic package Fig.1 3.2±0.1 (0.30) 2.6±0.1 0.5±0.1 (0.30) Bottom (2.3) (0.30) 0.65±0.1 2.6±0.1...