MGF4941CL
Description
The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.
Key Features
- Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ.) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ.) Fig.1
