MGF4941CL - Micro-X type plastic package

Mitsubishi Electric Semiconductor

Datasheet Details

Part number	MGF4941CL
Manufacturer	Mitsubishi Electric Semiconductor
File Size	195.85 KB
Description	Micro-X type plastic package
Datasheet	MGF4941CL_MitsubishiElectricSemiconductor.pdf

The MGF4941CL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers.

Low noise figure @ f=25.2GHz NFmin. = 2.4dB (Typ. ) High associated gain @ f=25.2GHz Gs = 10.0dB (Typ. ) Fig.1.

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Published: Nov 1, 2012 |