MGFS36E2325 2.3-2.5GHz HBT HYBRID IC

Mitsubishi Electric Semiconductor

Description

MITSUBISHI SEMICONDUCTOR MGFS36E2325 Specifications are subject to change without notice.2.3-2.5GHz HBT HYBRID IC Outline Drawing .
MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE.

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Datasheet Specifications

Part number: MGFS36E2325
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 128.91 KB
Datasheet: MGFS36E2325_MitsubishiElectricSemiconductor.pdf
Description: 2.3-2.5GHz HBT HYBRID IC

Features

* InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.5 3

Applications

* IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm (X-ray Top View) FUNCTIONAL BLOCK DIAGRAM Vc1 1000pF www. DataSheet. net/ Vc2 Vc3 1000pF 1000pF Pin Vcont (0/3V) Vcb 1000pF Pout Bias Circuit Vref P

MGFS36E2325 Distributors

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MGFS36E2325 2.3-2.5GHz HBT HYBRID Mitsubishi Electric Semiconductor

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