• Part: MGFS36E2325
  • Description: 2.3-2.5GHz HBT HYBRID IC
  • Manufacturer: Mitsubishi Electric
  • Size: 128.91 KB
Download MGFS36E2325 Datasheet PDF
Mitsubishi Electric
MGFS36E2325
DESCRIPTION MGFS36E2325 is a Ga As RF amplifier designed for Wi MAX CPE. 4.5 1.0 FEATURES - - - - - - - - - In Ga P HBT Device 6V Operation 27d Bm Linear Output Power 33d B Linear Gain Integrated Output Power Detector Integrated 1-bit 16d B Step Attenuator 50ohms Matched Surface Mount Package Ro HS pliant Package 36E 2325 (Lot No.) APPLICATIONS IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont DIM IN mm (X-ray Top View) FUNCTIONAL BLOCK DIAGRAM Vc1 1000p F .Data Sheet.net/ Vc2 Vc3 1000p F 1000p F Pin Vcont (0/3V) Vcb 1000p F Pout Bias Circuit Vref Po_det 33kohms Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making...