MGFS36E2325 Datasheet, Ic, Mitsubishi Electric Semiconductor

✔ MGFS36E2325 Features

InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 16dB Step Attenuator 50ohms M

✔ MGFS36E2325 Application

IEEE802.16-2004, IEEE802.16e-2005 1 2 3 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) P

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Part number:

MGFS36E2325

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Mitsubishi Electric Semiconductor

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📄 Datasheet

Description:

2.3-2.5ghz hbt hybrid ic. MGFS36E2325 is a GaAs RF amplifier designed for WiMAX CPE. 4.5 1.0 FEATURES * * * * * * * * * InGaP HBT Device 6V Operation 27dBm Li

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MGFS36E2325 2.3-2.5GHz HBT HYBRID Mitsubishi Electric Semiconductor