Description
The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range.
Features
- Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V).
- Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW.
- Broadband Frequency Range: 806-825/ 851-870MHz.
- Low-Power Control Current IGG=1mA (typ) at VGG=5V.
- Module Size: 66 x 21 x 9.88 mm.
- Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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RF Input (Pin) Gate Voltage (V.
RA20H8087M_MitsubishiElectricSemiconductor.pdf