RA20H8087M Datasheet - Mitsubishi Electric Semiconductor

RA20H8087M 806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO

The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the.

RA20H8087M Features

* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)

* Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 806-825/ 851-870MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 66 x 21 x 9.88 mm

RA20H8087M_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

RA20H8087M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

77.76 KB

Description:

806-825/ 851-870mhz 20w 12.5v/ 3 stage amp. for mobile radio.

RA20H8087M Distributor

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RA20H8087M RA20H8087M 806-825 851-870MHz 20W 12.5V Stage Amp. For MOBILE RADIO Mitsubishi Electric Semiconductor