RA20H8087M Datasheet, Radio, Mitsubishi Electric Semiconductor

RA20H8087M Features

  • Radio
  • Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
  • Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
  • Broadband Frequency Range: 806-825/ 851-870

PDF File Details

Part number:

RA20H8087M

Manufacturer:

Mitsubishi Electric Semiconductor

File Size:

77.76kb

Download:

📄 Datasheet

Description:

806-825/ 851-870mhz 20w 12.5v/ 3 stage amp. for mobile radio. The RA20H8087M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 806- to 870-MHz range. The bat

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TAGS

RA20H8087M
806-825
851-870MHz
20W
12.5V
Stage
Amp.
For
MOBILE
RADIO
Mitsubishi Electric Semiconductor

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Stock and price

part
Mitsubishi Electric
Electronic Component
ComSIT USA
RA20H8087M
14 In Stock
0
Unit Price : $0
No Longer Stocked
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