* Enhancement-Mode MOSFET Transistors (IDD≅ 0 @ VDD=12.5V, VGG=0V)
* Pout>20W, ηT>25% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 806-825/ 851-870MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Module Size: 66 x 21 x 9.88 mm
RA20H8087M Datasheet (77.76 KB)
RA20H8087M
Mitsubishi Electric Semiconductor
77.76 KB
806-825/ 851-870mhz 20w 12.5v/ 3 stage amp. for mobile radio.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8087M BLOCK DIAGRAM 806-825/ 851-870MHz 20W 12.5V, 3 St.
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