Datasheet Details
Part number:
RA80H1415M1
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
303.70 KB
Description:
Silicon rf power modules.
RA80H1415M1-MitsubishiElectricSemiconductor.pdf
Datasheet Details
Part number:
RA80H1415M1
Manufacturer:
Mitsubishi Electric Semiconductor
File Size:
303.70 KB
Description:
Silicon rf power modules.
RA80H1415M1, Silicon RF Power Modules
The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.
The output power and drain current increase as the gate voltage increases.
Wit
RA80H1415M1 Features
* Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
* Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 136-174MHz
* Low-Power Control Current IGG=1mA (typ) at VGG=5V
* Modul
📁 Related Datasheet
📌 All Tags