RA80H1415M1 Datasheet - Mitsubishi Electric Semiconductor

Silicon RF Power Modules

RA80H1415M1 Features

* Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)

* Pout>80W, T>50% @f=144-148MHz, Pout>60W, T>50% @ f=136-174MHz, VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 136-174MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Modul

RA80H1415M1 General Description

The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 144- to 148-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. Wit.

RA80H1415M1 Datasheet (303.70 KB)

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RA80H1415M1

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Mitsubishi Electric Semiconductor

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303.70 KB

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Silicon rf power modules.

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RA80H1415M1 Silicon Power Modules Mitsubishi Electric Semiconductor

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RA80H1415M1 Features

RA80H1415M1 General Description

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