RD60HUF1 RF POWER MOSFET

Mitsubishi Electric Semiconductor

Description

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 Silicon MOSFET Powe.
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

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Datasheet Specifications

Part number: RD60HUF1
Manufacturer: Mitsubishi Electric Semiconductor
File Size: 320.73 KB
Datasheet: RD60HUF1_MitsubishiElectricSemiconductor.pdf
Description: RF POWER MOSFET

Applications

* OUTLINE DRAWING 1 24.0+/-0.6 4-C2
* High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz

RD60HUF1 Distributors

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RD60HUF1 POWER MOSFET Mitsubishi Electric Semiconductor

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