* R1.6+/-0.15 0.1 -0.01 +0.05 APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets. 5.0+/-0.3 4.5+/-0.7 6.2+/-0.7 18.0+/-0.3 3.3+/-0.2 PIN 1.Drain 2.Source 3.Gate UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Tj Tstg Rth
RD60HUF1 Datasheet (320.73 KB)
RD60HUF1
Mitsubishi Electric Semiconductor
320.73 KB
Rf power mosfet.
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
Silicon MOSFET Powe.
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